Nowadays the electronics industry is transitioning towards more compact and powerful systems, Ansas Semiconductor(“Ansas”) announced its latest high performance MOSFET ”AG470N100LT” TOLT package, aimed at meeting the rapidly growing demands of the electronics market.
The new MOSFET adopts SGT(Split Gate Trench) dice technology, achieves high efficiency, high voltage tolerance, and excellent thermal management by reducing on-resistance and improving switching performance, making it suitable for a variety of high-frequency and high-voltage applications.
And the TOLT package provides tight mold body tolerances and the pins are realized with a negative standoff in order to support an optimized thermal stack, which is essential for good thermal conduction. The exposed PAD of the TOLT package has a special finish, further supporting an enhanced thermal performance.
About Ansas
Suzhou Ansas Semiconductor Co. LTD is specialized in the development and manufacturing of semiconductor discrete components like high power Rectifier, FRD, Suppressor diode and Si- and SiC-Schottky diode. We are ISO-certified and manufacturing in accordance with IATF 16949 quality standards.
We are always following our philosophy of “Advancing Excellence in Power Semiconductors” by providing highquality and innovative products for automotive, industrial, medical and consumer market.
With our technical expertise and our high level of flexibility we are focusing on giving the best possible support to our customers individual demands.
Learn more about Ansas at www.ansas-semi.com.
