Ansas today announced the official launch of its new SC02650A 650V Silicon Carbide (SiC) Schottky Barrier Diode. Utilizing the industry-standard SMA package, this product combines high efficiency, low loss, and high reliability, offering a new high-performance solution for applications such as energy storage, electric drive, industrial control, and communication power supplies.
Based on Silicon Carbide material, the SC02650A features excellent high-temperature resistance. Even under extreme operating conditions of 175°C, its reverse leakage current remains stable at the microampere level, meeting the stringent reliability requirements of industrial-grade applications. Its forward voltage drop is as low as 1.20V, significantly reducing conduction losses and improving power conversion efficiency.
Regarding switching characteristics, the SC02650A exhibits the typical advantages of SiC devices: extremely low capacitive charge and nearly negligible reverse recovery current, greatly reducing dynamic losses during high-frequency switching. This makes it particularly suitable for high-switching-frequency application scenarios such as server power supplies, communication power supplies, and electric vehicle onboard chargers (OBC), contributing to enhanced overall system efficiency.
The electrical characteristics of the SC02650A are as follows:
Leveraging these advantages, the SC02650A can effectively improve system efficiency, reduce thermal design pressure, and maintain stable, reliable performance in high-frequency applications.
The product adopts the classic SMA package, which offers good mechanical strength and thermal cycle endurance. While maintaining excellent electrical performance, it achieves full compatibility with existing supply chains, production processes, and circuit layouts, providing a "seamless upgrade" solution for power electronic systems pursuing high efficiency and high reliability.
The SC02650A offers the following benefits:
Suitable for Compact Designs: Enables efficient heat dissipation and high reliability within limited space
The SC02650A is suitable for the following application areas:
Its high-temperature stability, high-frequency low-loss characteristics, and robust package design provide strong support for system miniaturization, high efficiency, and reliable operation.
Ansas stated that the launch of the SC02650A marks a significant advancement in the company's SiC power device portfolio. The company will continue to expand its SiC product line, including devices with more voltage ratings, package types, and higher performance, to provide globally competitive, high-efficiency power solutions for customers.
About Ansas
Suzhou Ansas Semiconductor Co. LTD is specialized in the development and manufacturing of semiconductor discrete components like high power Rectifier, FRD, Suppressor diode and Si- and SiC-Schottky diode. We are ISO-certified and manufacturing in accordance with IATF 16949 quality standards.
We are always following our philosophy of “Advancing Excellence in Power Semiconductors” by providing highquality and innovative products for automotive, industrial, medical and consumer market.
With our technical expertise and our high level of flexibility we are focusing on giving the best possible support to our customers individual demands.
Learn more about Ansas at www.ansas-semi.com.